主题：【求助】（还剩5，6，7）求助8篇英文文献－－谢谢

1.
【作者】：J. M. Pearce, J. Deng, R. W. Collins, and C. R. Wronski
【题名】：Light-induced Defect States in Hydrogenated Amorphous Silicon Centered around 1.0 and 1.2 eV from the Conduction Band Edge
【期刊】： Applied Physics Letters
【年、卷、期、起止页码】：Vol. 83, No.18, pp3725-3727,2003.

2.
【作者】：G. Muller
【题名】：On the Generation and Annealing of Dangling Bond Defects in Hydrogenated Amorphous Silicon
【期刊】：App, pl. Phys. A
【年、卷、期、起止页码】：vol.45, pp. 41-51, 1988

3.
【作者】：A. Kolodziej
【题名】：Staebler-Wronski Effect in Amorphous Silicon and its Alloys
【期刊】：Opto-Electronics Review
【年、卷、期、起止页码】：12(1), pp. 21–32 ,2004

4.
【作者】：Kaichi Fukuda. NoBuo lmai. Shin-ichi Kawamura. Kunio Matsumura. Nobuki Ibaraki
【题名】：Switching Performance of High Rate Deposition Processing a-Si:H TFTs
【期刊】：Journal of Non-Crystalline Solids
【年、卷、期、起止页码】： pp.1137-1140,1996

5.
【作者】：Sandrine Martin, Jerzy Kanicki, Nicolas Szydlo, Alain-Rolland
【题名】：Analysis of the Amorphous Silicon Thin Film Transistors Behavior under Illumination
【期刊】： AM-LCD’
【年、卷、期、起止页码】：1997

6.
【作者】：Shih-Fong Lee, Kuan-Huei Lin, Chung-Jen Kuo
【题名】：The Correlation Between Deposition Parameters and Optoelectronic Properties in 1 Intrinsic Hydrogenated Amorphous Silicon
【期刊】：J.DA-YEH INST. TECH.
【年、卷、期、起止页码】：3 (1) pp.151-64, 1994

7.
【作者】：Shih-Fong Lee, Kuan-Huei Lin, Chung-Jen Kuo
【题名】：Sensitizing States in Intrinsic Hydrogenated Amorphous Silicon and Their Effect on Photoconductivity
【期刊】：J.DA-YEH INST. TECH
【年、卷、期、起止页码】：2(1) pp.81-95, 1993

8.
【作者】：Yoshimi YAMAJI, Mitsushi IKEDA, Masahiko AKIYAMA and Takahiko ENDO
【题名】：Characterization of Photo Leakage Current of Amorphous Silicon Thin-Film Transistors
【期刊】：Japanese Journal of Applied Physics
【年、卷、期、起止页码】：Vol. 38, pp.6202–6206,1999