主题：【已应助】求助英文文献5篇

【篇号】:1
【作者】H. Erramli, M. A. Misdaq, G. Blondiaux, C. Maddalon-Vinante, D. Barbier
【文章标题】Oxygen profiling in Czochralski-grown silicon substrates submitted to a rapid thermal annealing by using charged particles activation analysis 
【期刊名，年份，卷（期），起止页码】Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 145, Issue 4, 1 December 1998, Pages 562-566
【全文链接】http://www.sciencedirect.com/science?_ob=ArticleListURL&_method=list&_ArticleListID=1762682525&_sort=r&_st=13&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=998435d63ffd8cc90fc2e8cedfa013e4&searchtype=a

【篇号】:2
【作者】Cheng-Chang Peng, Chen-Kuei Chung, Jen-Fin Lin
【文章标题】Formation of microcrystalline silicon films using rapid crystal aluminum induced crystallization under low-temperature rapid thermal annealing 
【期刊名，年份，卷（期），起止页码】Thin Solid Films, Volume 518, Issue 23, 30 September 2010, Pages 6966-6971
【全文链接】http://www.sciencedirect.com/science?_ob=ArticleListURL&_method=list&_ArticleListID=1762682525&_sort=r&_st=13&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=998435d63ffd8cc90fc2e8cedfa013e4&searchtype=a

【篇号】:3
【作者】 L. Vergara, J. Olivares, E. Iborra, M. Clement, A. Sanz-Hervás, J. Sangrador
【文章标题】Two-dimensional modelling of diffusion of low-energy implanted arsenic in silicon at rapid thermal annealing   
【期刊名，年份，卷（期），起止页码】Vacuum, Volume 81, Issue 10, 15 June 2007, Pages 1184-1187
【全文链接】http://www.sciencedirect.com/science?_ob=ArticleListURL&_method=list&_ArticleListID=1762682525&_sort=r&_st=13&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=998435d63ffd8cc90fc2e8cedfa013e4&searchtype=a

【篇号】:4
【作者】M. Le Berre, P. Kleimann, B. Semmache, D. Barbier, P. Pinard
【文章标题】Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing 
【期刊名，年份，卷（期），起止页码】Diamond and Related Materials, Volume 14, Issues 3-7, March-July 2005, Pages 850-854
【全文链接】http://www.sciencedirect.com/science?_ob=ArticleListURL&_method=list&_ArticleListID=1762687757&_st=13&_sort=r&sisrterm=PECVD&searchtype=a&originPage=rslt_list&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=4a14ae4d0d0e5b5e78814a29e0b0873d

【篇号】: 5
【作者】Xiaoyong Gao, Hongliang Feng, Qinggeng Lin, Liwei Zhang, Xuwei Liu, Jiantao Zhao, Yufeng Liu, Yongsheng Chen, Jinhua Gu, Shie Yang, Weiqiang Li, Jingxiao Lu
【文章标题】Study on the mechanism of rapid solid-phase recrystallization of hydrogenated amorphous silicon film by rapid thermal processing 
【期刊名，年份，卷（期），起止页码】Thin Solid Films, Volume 518, Issue 15, 31 May 2010, Pages 4473-4476
【全文链接】http://www.sciencedirect.com/science?_ob=ArticleListURL&_method=list&_ArticleListID=1762687757&_st=13&_sort=r&sisrterm=PECVD&searchtype=a&originPage=rslt_list&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=4a14ae4d0d0e5b5e78814a29e0b0873d