【序号】:1
【作者】:
E. H. Park, J. Jang, S. Gupta, I. Ferguson, C. H. Kim, S. K. Jeon, and J. S. Park【题名】:
Air-voids embedded high efficiency InGaN-light emitting diode【期刊】:Angewandte Chemie International Edition in English,
【年、卷、期、起止页码】:
Appl. Phys. Lett., vol. 93, 2008, Article 191103
【全文链接】:
http://apl.aip.org/resource/1/applab/v93/i19/p191103_s1?isAuthorized=no【序号】:2
【作者】: M. H. Lo, P. M. Tu, C. H.Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang
【题名】:High efficiency light emitting diode with anisotropically etched GaN sapphire interface
【期刊】:Angewandte Chemie International Edition in English,
【年、卷、期、起止页码】:Appl. Phys. Lett., vol. 95, p. 041109, 2009.
【全文链接】:http://apl.aip.org/resource/1/applab/v95/i4/p041109_s1?isAuthorized=no