Vibrational study of the initial stages of the oxidation of Si(111) and Si(100) surfaces H. Ibach, H. D. Bruchmann and H. Wagner Applied Physics A: Materials Science & Processing, Volume 29, Number 3, Pages 113-124 (1982年11月)
An in situ infrared study of the room temperature oxidation of silicon with atomic and molecular oxygen Applied Surface Science, Volume 36, Issues 1-4, Pages 240-246 (1989) W. C. M. Claassen, R. W. A. H. Schmitz and J. Dieleman
An 18O Study of the Oxidation Mechanism of Silicon in Dry Oxygen F. Rochet, B. Agius, and S. Rigo Journal of The Electrochemical Society, Volume 131, Issue 4, Pages 914-923 (April 1984)
SiO2 ultra thin film growth kinetics as investigated by surface techniques Surface Science, Volume 118, Issues 1-2, Pages 32-46 (1 June 1982) J. Derrie and M. Commandré
Si---SiO2 interface characterization by ESCA Surface Science, Volume 84, Issue 2, Pages 355-374 (1 June 1979) Akitoshi Ishizaka, Seiichi Iwata and Yoshiaki Kamigaki
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