主题：【已应助】求助文献4篇

【序号】：1
【作者】：Kenji Nomura, Hiromichi Ohta,
【题名】：Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
【期刊】：Science
【年、卷、期、起止页码】：Vol 300 p1269
【全文链接】：http://www.sciencemag.org/cgi/search?volume=300&firstpage=1269&search_citation-search.x=34&search_citation-search.y=7


【序号】：2
【作者】：Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Min Suk Oh, Seongil Im, Sung-Min Yoon
【题名】：High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels
【期刊】：Advanced Materials
【年、卷、期、起止页码】：Volume 21, Issue 42, Date: November 13, 2009, Pages: 4287-4291
【全文链接】：http://www3.interscience.wiley.com/journal/122465544/abstract


【序号】：3
【作者】：Soon-Shin Kwon, Woong-Ki Hong, Gunho Jo, Jongsun Maeng, Tae-Wook Kim, Sunghoon Song, Takhee Lee
【题名】：Piezoelectric Effect on the Electronic Transport Characteristics of ZnO Nanowire Field-Effect Transistors on Bent Flexible Substrates
【期刊】：Advanced Materials
【年、卷、期、起止页码】：Volume 20, Issue 23, Date: December 2, 2008, Pages: 4557-4562
【全文链接】：http://www3.interscience.wiley.com/journal/121432678/abstract


【序号】：4
【作者】：Hongtao Yuan,Hidekazu Shimotani,
【题名】：High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids
【期刊】：Advanced Functional Materials
【年、卷、期、起止页码】：Volume 19 Issue 7, Pages 1046 - 1053
【全文链接】：http://www3.interscience.wiley.com/journal/122208816/abstract