主题：【已应助】求助文献5篇

【序号】：1
【作者】：M. Wolf
【书名】：The influence of heavydoping effects on silicon solarcell performance
【期刊】：Solar Cells
【年、卷、期、起止页码】:Volume 17, Issue 1, March 1986, Pages 53–63
【全文链接】：http://www.sciencedirect.com/science/article/pii/037967878690058X

【序号】：2
【作者】：David Redfield
【书名】：Heavy-doping effects in silicon: The role of Auger processes
【期刊】：Solar Cells
【年、卷、期、起止页码】:Volume 3, Issue 4, July 1981, Pages 313–326
【全文链接】：http://www.sciencedirect.com/science/article/pii/0379678781900223

【序号】：3
【作者】：M. Ayman Shibib
【书名】：Inclusion of degeneracy in the analysis of heavily doped regions in silicon solarcells and other semiconductor
devices
【期刊】：Solar Cells
【年、卷、期、起止页码】:Volume 3, Issue 1, February 1981, Pages 81–85
【全文链接】：http://www.sciencedirect.com/science/article/pii/0379678781900855

【序号】：4
【作者】：H.P.D. Lanyon
【书名】：The physics of heavily doped n+-p junction solar cells
【期刊】：Solar Cells
【年、卷、期、起止页码】:Volume 3, Issue 4, July 1981, Pages 289–311
【全文链接】：http://www.sciencedirect.com/science/article/pii/0379678781900211

【序号】：5
【作者】：D.H.J. Totterdell
【题名】：Application of open circuit voltage decay to the characterisation of heavydoping parameters in a p+ emitter of  a junction diode
【期刊】：Solid-State Electronics
【年、卷、期、起止页码】: Volume 33, Issue 7, July 1990, Pages 793–798
【全文链接】：http://www.sciencedirect.com/science/article/pii/003811019090057L