主题：【求助】（已应助）关于SiC 氧化 的两篇文章

题目：Oxidation of Single-Crystal Silicon Carbide Part I.Experimental Studies
期刊：J. Electrochem. Soc., Volume 137, Issue 3, pp. 854-858 (March 1990)
摘要
The oxidation of single crystal SiC in dry oxygen (10–3–1 atm and 1200°–1500°C) followed parabolic kinetics. Two differentapparent activation energies were calculated for oxidation of the (000 ) C faces of SiC, approximately 120 kJ/molbelow 1350°C and 260 kJ/mol above 1350°C. Two regimes were not apparent for oxidation of the (0001) Si faces, and apparentactivation energies lay between 223 and 298 kJ/mol. Double oxidation experiments using 16O2 and 18O2 indicated thatthe process is dominated by the transport of molecular oxygen at lower temperatures (<1300°C) with a substantial contributionfrom diffusion of ionic oxygen at higher temperatures. Epitaxially grown Si 13C films on alpha-Si 12C substrates viaCVD were used to study carbon transport behavior during oxidation of SiC. Depth profiles for carbonaceous species usingSIMS showed that carbon can transport quickly through the oxide layer, which eliminates the possibility that transport ofcarbonaceous species is rate controlling in the oxidation of SiC. Oxidation mechanisms of SiC are discussed on the basisof these results.


题目：Oxidation of Single-Crystal Silicon Carbide Part II. Kinetic Model
期刊：J. Electrochem. Soc., Volume 137, Issue 9, pp. 2812-2816 (September 1990)
作者：  Z. Zheng, R. E. Tressler, and K. E. Spear
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
(Revised April 10, 1990)
摘要：
The oxidation of single-crystal SiC in dry oxygen (10–3-1 atm and 1200°–1500°C) followed parabolic kinetics. The oxygenpartial pressure dependence of the oxidation rate of the (000 ) carbon face decreased with increasing temperature(from 0.6 at 1200°C to 0.3 at 1500°C). A kinetic model based on parallel transport of oxidants through the oxide via molecularand ionic oxygen diffusion mechanisms fits the observed oxidation behavior. Both diffusivity and activation energyvalues for oxidants permeating through the oxide derived from the model using the experimental data are similar to thosefor molecular oxygen permeating through vitreous SiO2. Ionic oxygen diffusion inward via the lattice presumably via avacancy mechanism becomes more important when oxidation takes place at higher temperatures and at low oxygen partialpressures. Both diffusivity and activation energy values for the ionic oxidant diffusion derived from the model usingthe experimental data are similar to those values for the diffusion of oxygen through silica reported in the literature.
©1990 The Electrochemical Society, Inc.

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