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Titre du document / Document title
High power photoconductive switch of 4H-SiC with damage-free electrodes by using n+-GaN subcontact layer
Auteur(s) / Author(s)
ZHU K. ; LI G. ; JOHNSTONE D. ; FU Y. ; LEACH J. ; GANGULY B. ; LITTON C. W. ; MORKOG H. ;
Résumé / Abstract
4H SiC high power photoconductive semiconductor switching devices were fabricated. A highly doped n+-GaN subcontact epilayer was grown on SiC by organometallic vapor phase epitaxy in order to improve ohmic contact and avoid contact damage or degradation due to current filamentation, under high power operation. With an n+-GaN subcontact layer, the contact resistance was reduced and current crowding alleviated. Therefore the electrodes were not damaged or degraded at high power operation. Photocurrent up to 200 A and breakdown voltage up to 2900 V have been observed for the devices.
Revue / Journal Title
Materials science forum  ISSN 0255-5476  CODEN MSFOEP 
Source / Source
2006, vol. 527-29 (2), pp. 1387-1390 [4 page(s) (article)]
Langue / Language
Anglais

Editeur / Publisher
Trans Tech, Aedermannsdorf, SUISSE  (1984) (Revue)

Mots-clés d'auteur / Author Keywords
high power photoconductive switch ; contact damage ;
Localisation / Location
INIST-CNRS, Cote INIST : 21741, 35400015899785.1450


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High power photoconductive switches of 4H SiC with Si3N4 passivation and n+ -GaN subcontact