题目:Reduction of the defect density in CdTe buffer layers for the growth of HgCdTe infrared photodiodes on Si(211) substrates 作者:Wei, H-Y | Salamanca-Riba, L | Dhar, N K 期刊号:MATER RES SOC SYMP PROC. 卷和起止页码:Vol. 484, pp. 329-334. 1997 全文链接:http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=12290&DID=238681&action=detail