【序号】:1 【作者】:S.V. Ivanov, A.A. Boudza, R.N. Kutt, N.N. Ledentsov, B.Ya. Meltser, S.S. Ruvimov, S.V. Shaposhnikov,P.S. Kop'ev 【题名】: Molecular beam epitaxial growth of InSb/GaAs(100) and InSb/Si(100) heteroepitaxial layers (thermodynamic analysis and characterization) 【期刊】:Journal of crystal growth 【年、卷、期、起止页码】:1995;156(3):191-205. 【全文链接】:http://www.sciencedirect.com/science/article/pii/0022024895003053
【序号】:2 【作者】:S.D. Wu L.W. Guo, Z.H. Li, X.Z. Shang, W.X. Wang, Q. Huang, J.M. Zhou 【题名】: Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy 【期刊】:Journal of crystal growth 【年、卷、期、起止页码】:2005 277(1):21-25 【全文链接】:http://www.sciencedirect.com/science/article/pii/S002202480402130X
【序号】:3 【作者】:J L Davis, P E Thompson and R J Wagner 【题名】: Growth and characterisation of InSb/GaAs grown using molecular beam epitaxy 【期刊】:Semicond. Sci. Technol. 【年、卷、期、起止页码】:1990 ;5 (3): 225-228. 【全文链接】:http://iopscience.iop.org/0268-1242/5/3S/050
【序号】:4 【作者】:E. Michel, J. D. Kim, S. Javadpour, J. Xu, I. Ferguson, and M. Razeghi 【题名】: The molecular beam epitaxial growth of InSb on (111)B GaAs 【期刊】:Appl. Phys. Lett. 【年、卷、期、起止页码】:1996;69 (27) 【全文链接】:http://apl.aip.org/resource/1/applab/v69/i2/p215_s1?isAuthorized=no