【序号】:1
【作者】:Hu, S.M.
【题名】:Defects in silicon substrates
【期刊】:Journal of Vacuum Science and Technology
【年、卷、期、起止页码】:1977;14(1):17-31.
【全文链接】:http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=4952508&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D4952508
【序号】:2
【作者】:S Mil'shtein
【题名】:Dislocation-induced noise in semiconductors
【期刊】: J. Phys.: Condens. Matter
【年、卷、期、起止页码】:2002 14:13387
【全文链接】:http://iopscience.iop.org/0953-8984/14/48/393
【序号】:3
【作者】:Noreika, A.J.
【题名】:Properties of MBE grown InSb and InSb1?xBix
【期刊】:vac.sci.technol.A
【年、卷、期、起止页码】:1983 ;1:558.
【全文链接】:http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=4927816&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D4927816
【序号】:4
【作者】:R Addinall, R Murray, R C Newman, J Wagner, S D Parker, R L Williams, R Droopad, A G DeOliveira, I Ferguson and R A Stradling
【题名】:Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering
【期刊】:Semiconductor Science and Technology
【年、卷、期、起止页码】:1991;6:147
【全文链接】:http://iopscience.iop.org/0268-1242/6/3/001
【序号】:5
【作者】:G. M. Williams1, C. R. Whitehouse1, T. Martin1, N. G. Chew1, A. G. Cullis1, T. Ashley1, D. E. Sykes, K. Mackey, and R. H. Williams
【题名】:Molecular‐beam epitaxy of (100) InSb for CdTe/InSb device applications
【期刊】:J. Appl. Phys
【年、卷、期、起止页码】:1988;63:1526
【全文链接】:http://jap.aip.org/resource/1/japiau/v63/i5/p1526_s1?isAuthorized=no
先谢谢啦!
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补充答案:
dahua1981回复于2013/09/18
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