【篇号】:1
【作者】
Jaechul Park【文章标题】High-performance amorphous gallium indium zinc oxide thin-film transistors through
N2O plasma passivation
【期刊名,年份,卷(期),起止页码】
Applied Physics Letters (Volume:93 ,
Issue: 5 ) Aug 2008
【全文链接】
http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=4836493&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D4836493【求助者联系方式】
【篇号】:2
【作者】
Chen, Wei-Tsung【文章标题】Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors
【期刊名,年份,卷(期),起止页码】
Electron Device Letters, IEEE (Volume:32 ,
Issue: 11 ) Nov. 2011
【全文链接】
http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6026903&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D6026903【求助者联系方式】
【篇号】:3
【作者】
Shou-En Liu【文章标题】Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors
【期刊名,年份,卷(期),起止页码】
Electron Device Letters, IEEE (Volume:32 ,
Issue: 2 ) Feb. 2011
【全文链接】
http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=5671465&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D5671465【求助者联系方式】