[序号]:1
[作者]:Peng Gao, et al
[题名]:Atomic-scale mechanisms of ferroelastic domain wall mediated ferroelectric switching
[期刊]:Nature Comm[年、卷、期、起止页码]: 2013[全文链接]:http://www.nature.com/ncomms/2013/131121/ncomms3791/abs/ncomms3791.html[序号]:2
[作者]:H. Lu, et al
[题名]:Enhancement of ferroelectric polarization stability by interface engineering
[期刊]:Adv. Mater[年、卷、期、起止页码]: 2012, 24(9), 1209-1216[全文链接]:http://onlinelibrary.wiley.com/doi/10.1002/adma.201104398/abstract;jsessionid=A7D72FED72330BDFBE9714E744A7E224.f02t04?systemMessage=Wiley+Online+Library+will+be+disrupted+on+7+December+from+10%3A00-15%3A00+BST+%2805%3A00-10%3A00+EDT%29+for+essential+maintenance[序号]:3
[作者]:Y. L. Hu, et al
[题名]:Antiphase boundaries and rotation domains in In2O3 films grown on yttria-stabilized zirconia
[期刊]:J. Appl. Cryst[年、卷、期、起止页码]: 2014, 47, 443-448[全文链接]:http://journals.iucr.org/j/issues/2014/01/00/issconts.html