Date / Time | Morning (9:00am - 12:00noon) | Afternoon (2:00pm - 5:00pm) |
15 July 2013 (Monday) | 讲座1:失效分析:最佳实践、挑战和趋势Dr. Phillippe Perdu, CNES, France | 讲座2:在高介电常数介质/金属堆栈中的介电击穿:用纳米技术研究击穿所诱导的形态变化和缺陷 Prof. Kin-Leong Pey, SUTD, Singapore |
16 July 2013 (Tuesday) | 讲座3:MOS器件的辐射响应和长期可靠性Prof. Daniel M. Fleetwood, IEEE fellow, Vanderbilt University, USA | 讲座4:先进器件的可靠性:从确定性的失效机理到时间有关的变化无常Prof. Guido Groeseneken, IMEC, Belgium |