【序号】:1
【作者】:N. A. Torkhov
【题名】:Formation of a native-oxide structure on the surface of n-GaAs under natural oxidation in air
【期刊】:Semiconductors
【年、卷、期、起止页码】 : October 2003, Volume 37, Issue 10, pp 1177-1184
【链接】:
http://link.springer.com/article/10.1134%2F1.1619513【序号】:2
【作者】:Masamichi Yamada, Yuichi Ide, Kiyoshi Tone
【题名】:Interaction of atomic hydrogen with GaAs (001) surface oxide: volatile Ga-oxide formation
【期刊】:Applied Surface Science
【年、卷、期、起止页码】 : Volumes 70-71, Part 2, 2 June 1993, Pages 531-535
【链接】:
http://www.sciencedirect.com/science/article/pii/016943329390575V【序号】:3
【作者】:B.J. Sealy, P.L.F. Hemment
【题名】:Structure and composition of native oxides on GaAs
【期刊】:Thin Solid Films
【年、卷、期、起止页码】 : Volume 22, Issue 3, July 1974, Pages S39-S43
【链接】:
http://www.sciencedirect.com/science/article/pii/0040609074903101【序号】:4
【作者】:E.P. Donovan, D.R. Brighton, G.K. Hubler, D. van Vechten
【题名】:Ion beam assisted deposition of substoichiometric silicon nitride
【期刊】:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
【年、卷、期、起止页码】 : Volumes 19-20, Part 2, 1987, Pages 983-986
【链接】:
http://www.sciencedirect.com/science/article/pii/S0168583X87801969【序号】:5
【作者】:Liu Xianghuai, Yu Yuehui, Zheng Zhihong, Huang Wei, Zou Shichang, Jin Zuqing, Chang Ming, Xu Shoulian, S. Taniguchi, T. Shibata, K. Nakamura
【题名】:Properties and structure of silicon nitride films synthesized by ion-beam-enhanced deposition
【期刊】:Surface and Coatings Technology
【年、卷、期、起止页码】 : Volume 46, Issue 2, July 1991, Pages 227-232
【链接】:
http://www.sciencedirect.com/science/article/pii/025789729190165S