1、【题 名】:Characteristics of II-VI semiconductor thin films grown by MBE on InSb substrates【作 者】:. D Ashenford, D Johnston, B Lunn and C G Scott【期刊名全称】:Journal of Physics: Condensed Matter【文献页码】:1989 doi: 10.1088/0953-8984/1/SB/010【全文链接】: http://iopscience.iop.org/0953-8984/1/SB/010;jsessionid=B76BFB9B54DCE0AC218E5D59ED21C400.c22、【题 名】:Preparation of InSb substrates for molecular beam epitaxy 【作 者】:. Liu, W. K. Yuen, W. T. Stradling, R. A. 【期刊名全称】:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures【文献页码】:1995,(4):1539 - 1545【全文链接】:http://avspublications.org/jvstb/resource/1/jvtbd9/v13/i4/p1539_s1?isAuthorized=no