【序号】:1
【作者】:Noboru Negoro, Seiya Kasai, Hideki Hasegawa
【题名】:Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (0 0 1)-c(4×4) surfaces
【期刊】:Applied Surface Science
【年、卷、期、起止页码】 : Volume 190, Issues 1-4, 8 May 2002, Pages 269-274
【链接】:
http://www.sciencedirect.com/science/article/pii/S0169433201008650【序号】:2
【作者】:K. Martens, W.F. Wang, A. Dimoulas, G. Borghs, M. Meurisa, G. Groeseneken, H.E. Maesa
【题名】:Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices
【期刊】:Solid-State Electronics
【年、卷、期、起止页码】 : Volume 51, Issue 8, August 2007, Pages 1101-1108
【链接】:
http://www.sciencedirect.com/science/article/pii/S0038110107001967【序号】:3
【作者】:Patrick Casey, Greg Hughes
【题名】:Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition
【期刊】:Applied Surface Science
【年、卷、期、起止页码】 : Volume 256, Issue 24, 1 October 2010, Pages 7530-7534
【链接】:
http://www.sciencedirect.com/science/article/pii/S0169433210008032【序号】:4
【作者】:Zhou Jiankun, Chen Youshan, Liu Xianghuai, Zou Shichang
【题名】:Computer simulation of ion beam enhanced deposition of silicon nitride films
【期刊】:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
【年、卷、期、起止页码】 : Volume 39, Issues 1-4, 2 March 1989, Pages 182-184
【链接】:
http://www.sciencedirect.com/science/article/pii/0168583X89907672【序号】:5
【作者】:Liu Xianghuai, Yu Yuehui, Zheng Zhihong, Huang Wei, Zou Shichang, Jin Zuqing, Chang Ming, Xu Shoulian, S. Taniguchi, T. Shibata, K. Nakamura
【题名】:Properties and structure of silicon nitride films synthesized by ion-beam-enhanced deposition
【期刊】:Surface and Coatings Technology
【年、卷、期、起止页码】 : Volume 46, Issue 2, July 1991, Pages 227-232
【链接】:
http://www.sciencedirect.com/science/article/pii/025789729190165S