主题：请问什么是AFM和SCM?

原文由 新手上路A 发表:
问个很菜的问题,什么是AFM(Atomic force microscopy) 和SCM(Scanning Capacitance Microscopy)?有没有谁用过?主要用在哪些领域?

谢谢大家!

要学会用google啊，呵呵。AFM就是原子力显微镜，主要用于薄膜样品的微观起伏，SCM我倒是第一次看到，查了一下，主要用于半导体表面的局域电容检测。
根据下文：
An SCM is a version of an Atomic Force Microscope (AFM) with an additional module that measures the electronic capacitance of a sample, which is related to the sample doping structure. The SCM can also be used in its AFM mode, which provides the user with detailed surface profiles of the sample, as an additional useful sample imaging technique.
SCM是AFM的一种特殊模式，是一种附加的样品成像技术。可以测试样品的电容，而这个数据和样品的掺杂结构有关。SCM也可以用来做AFM的测试，主要提供给用户表面细节的轮廓。
http://www.ntmdt.com/SPM-Techniques/Principles/AFM/Many-pass_techniques/flashid153.swf
你可以去下面的网址看看稍微形象的介绍：
http://www.ntmdt.com/SPM-Techniques/Principles/AFM/Many-pass_techniques/Scanning_Capacitance_Microscopy_mode48.html

谢谢shxie版主的答复,再问个问题,什么是 Auger Microprobe 和  E-Beam Lithography system?

原文由 新手上路A 发表:
谢谢shxie版主的答复,再问个问题,什么是 Auger Microprobe 和  E-Beam Lithography system?

前面的是扫描俄歇探针：
http://www.enma.umd.edu/microanalysis/SAEM.html
The Scanning Auger Microprobe provides a non-destructive elemental analysis of a specimen surface with atom layer depth resolution and lateral resolution of a few microns. It employs a scanning beam as the prove for Auger Electron Spectroscopy analysis. The diameter of the impinging electron beam can be preselected and determineds the minimum size of the analyzed area. Analysis depth, typically 10 A or less, is determined by the escape depth of Auger electrons. SAEM is a high sensitivity technique allowing detection and identification of elements present in quantities down to 0.1% of a monolayer. Sensitivity variation is less than an order of magnitude for all elements of the periodic table above helium. The instrument can be used to determine the composition of a selected point on the specimen or to determine the distribution of elements on the surface.

后面的具体翻译不清楚，直接译为：电子束印刷系统，就是电子刻板技术吧，用来半导体的微加工，电子束可以控制在20nm左右吧：
http://www.electronicstalk.com/news/iod/iod102.html
Electron-beam lithography uses a focused electron beam to write ultrafine patterns on semiconductor substrates covered by a resist material.

The instruments are basically scanning electron microscopes designed for the extreme precision and stability required to write large and complex patterns with nanometer linewidths.

The instruments are controlled by large computer systems able to convert CAD drawings into exposure sequences.

The system is versatile in its applications from basic research of elements to test production of optical elements to research and development for masks for high accelerating voltage exposure.

谢谢版主,又长见识了.

感谢版主指导,谢谢.

到扫描俄歇探针论坛看了看,很冷清,人气不旺,是不是国内用户很少啊?

原文由 新手上路A 发表:
到扫描俄歇探针论坛看了看,很冷清,人气不旺,是不是国内用户很少啊?

是啊，连一页都不满呢，这次开会也没有注意到有用这个的，或许太贵吧？也或者其他设备足以解决问题，这个就显得多余？