【序号】:1
【作者】:S. Cassette, F. Plais, J. Olivier
【题名】:Surface analysis to study the improvements of silicon nitride/gallium arsenide interface properties
【期刊】:Surface and Interface Analysis
【年、卷、期、起止页码】:Volume 16, Issue 1-12, July 1990, Pages 41-45
【全文链接】:
http://onlinelibrary.wiley.com/doi/10.1002/sia.740160112/fullDOI:
http://dx.doi.org/10.1002/sia.740160112【序号】:2
【作者】:J.L. Guizot, P. Alnot, J. Perrin and B. Allain
【题名】:Evolution of the GaAs(001) Surface Physico-Chemical Characteristics and Electrical Properties of the Si3N4/GaAs Interface with the NH3 Photolysis Treatment of the GaAs Surface.
【期刊】:MRS Proceedings
【年、卷、期、起止页码】:Volume 144 / 1988
【全文链接】:
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8167307DOI:
http://dx.doi.org/10.1557/PROC-144-513