主题：我有一篇文章很重要 Corrosion of Ti3SiC2 and Ti4AlN3 in concentrated HCl solutions

Title: Corrosion of Ti3SiC2 and Ti4AlN3 in concentrated HCl solutions
Author(s): Jovic VD
Source: PROGRESS IN ADVANCED MATERIALS AND PROCESSES MATERIALS SCIENCE FORUM 453-454: 127-132 2004
Document Type: Article
Language: English
Cited References: 8      Times Cited: 0       
Abstract: In this paper the mechanism of SiO2 layer formation onto Ti3SiC2 and the propel-ties of the passive films formed on Ti3SiC2 and Ti4AlN3 in concentrated HCl solutions were investigated by SEM, polarization and EIS measurements. It is shown that the rate of the formation of a protective layer of SiO2 onto Ti3SiC2 surface during anodic oxidation is faster in the beginning, while after an induction period this rate is established at a value of about 130 mum cm(-2) per year, giving the rate of Ti dissolution of about 9 x 10(-4) moles cm(-2) per year. By analyzing the Mott-Schottky plots it was shown that the passive film onto Ti3SiC2 is an n-type semiconductor dominated by space-charge capacitance. Preliminary results for Ti4AlN3 indicate the presence of the passive film of a p-type semiconductor.
Author Keywords: corrosion; Mott-Schottky plot; passive film; semiconductor; Ti3SiC2; Ti4AlN3
KeyWords Plus: BEHAVIOR
Addresses: Jovic VD (reprint author), Univ Belgrade, Ctr Multidiciplinary Studies, Karnegijeva 4, Belgrade, Serbia Montene Yugoslavia
Univ Belgrade, Ctr Multidiciplinary Studies, Belgrade, Serbia Montene Yugoslavia
Publisher: TRANS TECH PUBLICATIONS LTD, BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
Subject Category: MATERIALS SCIENCE, MULTIDISCIPLINARY
IDS Number: BAC47

ISSN: 0255-5476

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